MOS Charge Pumps for Low-Voltage Operation - Solid-State Circuits, IEEE Journal of
نویسندگان
چکیده
New MOS charge pumps utilizing the charge transfer switches (CTS’s) to direct charge flow and generate boosted output voltage are described. Using the internal boosted voltage to backward control the CTS of a previous stage yields charge pumps that are suitable for low-voltage operation. Applying dynamic control to the CTS’s can eliminate the reverse charge sharing phenomenon and further improve the voltage pumping gain. The limitation imposed by the diode-configured output stage can be mitigated by pumping it with a clock of enhanced voltage amplitude. Using the new circuit techniques, a 1.2-V-to-3.5-V charge pump and a 2-V-to-16-V charge pump are demonstrated.
منابع مشابه
Matching Properties Of MOS Transistors - Solid-State Circuits, IEEE Journal of
The matching properties of the threshold voltage, substrate factor, and current factor of MOS transistors have been analyzed and measured. Improvements to the existing theory are given, as well as extensions for long-distance matching and rotation of devices. Matching parameters of several processes are compared. The matching results have been verified by measurements and calculations on severa...
متن کامل(73) Asslgnee' Internatlenal Busmess Machmes Pump Circuit with Consideration of Gate-oxide Reliability in Low Corporatlon' Armonk' Ny (us) Voltage Cmos Processes, " Ieee Journal of Solid-state Circuits, Vol
_ _ _ _ _ 41, N0. 5, May 2006, pp. 1100-1107. ( * ) Nonce: subleqw any dlsclalmeri the term Ofthls Ming-Dou Ker, Shih-Lun Chen, Chia-Shen Tsai; “A New Charge patent 1S eXIended 01‘ adjusted under 35 Pump Circuit Dealing With Gate-Oxide Reliability Issue in Low U.S.C. 154(b) by 15 days. Voltage Processes,” IEEE Journal of Solid-State Circuits, ISCAS 2004, pp. 1-321-1-324. 21 A l. N .: 11/614 750...
متن کاملA Reduced-Area Low-Power Low-Voltage Single-Ended Differential Pair - Solid-State Circuits, IEEE Journal of
In analog very large scale integratin (VLSI), a high computational density is important. Area savings can be obtained by operating the MOS transistor in the triode region, thus exploiting its symmetrical nature. Applying this theory to a single-ended differential pair results in an area reduction of up to a factor 1.5, which can be significant, e.g., for neural networks, where the basic cells a...
متن کاملA Fully Integrated Digital LDO With Coarse-Fine-Tuning and Burst-Mode Operation
The digital low dropout regulator (D-LDO) has drawn significant attention recently for its low-voltage operation and process scalability. However, the tradeoff between current efficiency and transient response speed has limited its applications. In this brief, a coarse–fine-tuning technique with burst-mode operation is proposed to the D-LDO. Once the voltage undershoot/ overshoot is detected, t...
متن کاملA New True-Single-Phase-Clocking BiCMOS Dynamic Pipelined Logic Family for High-Speed, Low-Voltage P - Solid-State Circuits, IEEE Journal of
New true-single-phase-clocking (TSPC) BiCMOS/ BiNMOS/BiPMOS dynamic logic circuits and BiCMOS/BiNMOS dynamic latch logic circuits for high-speed dynamic pipelined system applications are proposed and analyzed. In the proposed circuits, the bootstrapping technique is utilized to achieve fast near-full-swing operation. The circuit performance of the proposed new dynamic logic circuits and dynamic...
متن کامل